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TrenchStop Series
(R)
IGW40T120
C
Low Loss IGBT in TrenchStop(R) and Fieldstop technology
* * * Short circuit withstand time - 10s Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop(R) and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge 1 Qualified according to JEDEC for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 1200V IC 40A VCE(sat),Tj=25C 1.7V Tj,max 150C Marking Code G40T120 Package PG-TO-247-3
G
E
* * * * * *
PG-TO-247-3
Type IGW40T120
Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 150C Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Tj Tstg -40...+150 -55...+150 260 C
2)
Symbol VCE IC
Value 1200 75 40
Unit V A
ICpuls VGE tSC Ptot
105 105 20 10 270 V s W
VGE = 15V, VCC 1200V, Tj 150C
1 2)
J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.4 Nov. 09
Power Semiconductors
TrenchStop Series
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Thermal resistance, junction - ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V, I C = 1. 5mA VCE(sat) V G E = 15V, I C = 40A T j = 25 C T j = 12 5 C T j = 15 0 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 1. 5mA, V C E = V G E V C E = 1200V, V G E = 0V T j = 25 C T j = 15 0 C Gate-emitter leakage current Transconductance Integrated gate resistor IGES gfs RGint V C E = 0V ,V G E = 2 0V V C E = 20V, I C = 40A 21 6 0.4 4.0 600 nA S 5.0 1.8 2.1 2.3 5.8 2.3 6.5 mA 1200 V Symbol Conditions Value min. typ. max. Unit RthJA 40 RthJC 0.45 K/W Symbol Conditions Max. Value Unit
(R)
IGW40T120
Power Semiconductors
2
Rev. 2.4
Nov. 09
TrenchStop Series
Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current
1)
(R)
IGW40T120
Ciss Coss Crss QGate LE IC(SC)
V C E = 25V, V G E = 0V, f= 1 M Hz V C C = 9 60V, I C = 40A V G E = 1 5V
-
2500 130 110 203 13 210
-
pF
nC nH A
V G E = 1 5V,t S C 10s V C C = 600V, T j = 25 C
-
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j = 25 C, V C C = 6 00V, I C = 40A, V G E = 0/ 1 5V , R G = 1 5 , L 2 ) = 180nH, C 2 ) =39pF Energy losses include "tail" and diode reverse recovery. 48 34 480 70 3.3 3.2 6.5 mJ ns Symbol Conditions Value min. typ. max. Unit
Switching Characteristic, Inductive Load, at Tj=150 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j = 15 0 C V C C = 6 00V, I C = 40A, V G E = 0/ 1 5V , R G = 15, L 2 ) = 180nH, C 2 ) =39pF Energy losses include "tail" and diode reverse recovery. 52 40 580 120 5.0 5.4 10.4 mJ ns Symbol Conditions Value min. typ. max. Unit
1) 2)
Allowed number of short circuits: <1000; time between short circuits: >1s. Leakage inductance L and Stray capacity C due to dynamic test circuit in Figure E. 3 Rev. 2.4 Nov. 09
Power Semiconductors
TrenchStop Series
(R)
IGW40T120
100A
100A TC=80C
tp=3s 10s
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
80A
TC=110C
10A 50s 150s 1A 500s
60A
40A
Ic
Ic
20A
20ms DC
0A 10Hz
100Hz
1kHz
10kHz
100kHz
0,1A 1V
10V
100V
1000V
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 150C, D = 0.5, VCE = 600V, VGE = 0/+15V, RG = 15)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C;VGE=15V)
70A
250W
60A
IC, COLLECTOR CURRENT
POWER DISSIPATION
200W
50A 40A 30A 20A 10A 0A 25C
150W
Ptot,
100W
50W
0W 25C
50C
75C
100C
125C
75C
125C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 150C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 150C)
Power Semiconductors
4
Rev. 2.4
Nov. 09
TrenchStop Series
(R)
IGW40T120
100A 90A
100A 90A
IC, COLLECTOR CURRENT
70A 60A 50A 40A 30A 20A 10A 0A 0V
15V 13V 11V 9V 7V
IC, COLLECTOR CURRENT
80A
VGE=17V
80A 70A 60A 50A 40A 30A 20A 10A 0A
VGE=17V 15V 13V 11V 9V 7V
1V
2V
3V
4V
5V
6V
0V
1V
2V
3V
4V
5V
6V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 150C)
100A 90A
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
3,5V 3,0V 2,5V 2,0V 1,5V 1,0V 0,5V 0,0V -50C IC=40A IC=25A IC=10A IC=80A
IC, COLLECTOR CURRENT
80A 70A 60A 50A 40A 30A 20A 10A 0A 0V 2V TJ=150C 25C 4V 6V 8V 10V 12V
0C
50C
100C
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V)
TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
Power Semiconductors
5
Rev. 2.4
Nov. 09
TrenchStop Series
(R)
IGW40T120
td(off)
1000 ns td(off) 100 ns tf td(on) tr 10 ns
t, SWITCHING TIMES
100ns
tf
td(on) 10ns tr
1ns
t, SWITCHING TIMES
20A 40A 60A
0A
1 ns
5
15
25
35
45
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=150C, VCE=600V, VGE=0/15V, RG=15, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=150C, VCE=600V, VGE=0/15V, IC=40A, Dynamic test circuit in Figure E)
td(off)
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
7V 6V 5V 4V min. 3V 2V 1V 0V -50C max. typ.
t, SWITCHING TIMES
100ns tf td(on) tr
10ns
0C
50C
100C
150C
0C
50C
100C
150C
TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=40A, RG=15, Dynamic test circuit in Figure E)
TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 1.5mA)
Power Semiconductors
6
Rev. 2.4
Nov. 09
TrenchStop Series
(R)
IGW40T120
*) Eon and Ets include losses due to diode recovery
*) Eon and Etsinclude losses due to diode recovery
E, SWITCHING ENERGY LOSSES
20,0mJ
Ets*
E, SWITCHING ENERGY LOSSES
25,0mJ
15 mJ
Ets*
10 mJ Eon* Eoff 5 mJ
15,0mJ Eon* 10,0mJ Eoff 5,0mJ
0,0mJ 10A
20A
30A
40A
50A
60A
70A
0 mJ
5
15
25
35
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=150C, VCE=600V, VGE=0/15V, RG=15, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ=150C, VCE=600V, VGE=0/15V, IC=40A, Dynamic test circuit in Figure E)
15mJ
*) E on and E ts include losses due to diode recovery
15mJ
*) Eon and Ets include losses due to diode recovery
E, SWITCHING ENERGY LOSSES
E ts* 10mJ
E, SWITCHING ENERGY LOSSES
10mJ Ets*
E off 5mJ E on*
5mJ E off Eon*
0mJ 50C 100C 150C
0mJ 400V
500V
600V
700V
800V
TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=40A, RG=15, Dynamic test circuit in Figure E)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ=150C, VGE=0/15V, IC=40A, RG=15, Dynamic test circuit in Figure E)
Power Semiconductors
7
Rev. 2.4
Nov. 09
TrenchStop Series
(R)
IGW40T120
Ciss
VGE, GATE-EMITTER VOLTAGE
15V
1nF
240V 10V
960V
c, CAPACITANCE
Coss 100pF Crss
5V
0V
0nC
50nC
100nC
150nC
200nC
250nC
10pF
0V
10V
20V
QGE, GATE CHARGE Figure 17. Typical gate charge (IC=40 A)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz)
SHORT CIRCUIT WITHSTAND TIME
15s
IC(sc), short circuit COLLECTOR CURRENT
300A
10s
200A
5s
100A
tSC,
0s
12V
14V
16V
0A
12V
14V
16V
18V
VGE, GATE-EMITTETR VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25C)
VGE, GATE-EMITTETR VOLTAGE Figure 20. Typical short circuit collector current as a function of gateemitter voltage (VCE 600V, Tj 150C)
Power Semiconductors
8
Rev. 2.4
Nov. 09
TrenchStop Series
(R)
IGW40T120
VCE, COLLECTOR-EMITTER VOLTAGE
VCE
IC, COLLECTOR CURRENT
600V 60A 60A 600V
400V
40A
40A
IC
400V
200V
20A
20A
200V
0V
IC
0us 0.5us 1us 1.5us
VCE
0A 0A 0us 0V 0.5us 1us 1.5us
t, TIME Figure 21. Typical turn on behavior (VGE=0/15V, RG=15, Tj = 150C, Dynamic test circuit in Figure E)
t, TIME Figure 22. Typical turn off behavior (VGE=15/0V, RG=15, Tj = 150C, Dynamic test circuit in Figure E)
ZthJC, TRANSIENT THERMAL RESISTANCE
D=0.5 0.2 0.1 0.05
R,(K/W) 0.159 0.133 0.120 0.038
10 K/W
-1
10 K/W
-2
0.02 0.01 single pulse
, (s) -1 1.10*10 -2 1.56*10 -3 1.35*10 -4 1.51*10
R2
R1
C1=1/R1
C2=2/R2
10 K/W 10s
-3
100s
1ms
10ms
100ms
tP, PULSE WIDTH Figure 23. IGBT transient thermal resistance (D = tp / T)
Power Semiconductors
9
Rev. 2.4
Nov. 09
TrenchStop Series
(R)
IGW40T120
PG-TO247-3
Power Semiconductors
10
Rev. 2.4
Nov. 09
TrenchStop Series
(R)
IGW40T120
1
Tj (t) p(t)
r1
r2
2
n
rn
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit Leakage inductance L =180nH and Stray capacity C =39pF.
Power Semiconductors
11
Rev. 2.4
Nov. 09
TrenchStop Series
(R)
IGW40T120
Power Semiconductors
12
Rev. 2.4
Nov. 09
TrenchStop Series
(R)
IGW40T120
Edition 2006-01 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 11/18/09. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Power Semiconductors
13
Rev. 2.4
Nov. 09

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